Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• available via a single imaging mode. We demonstrate this through the characterization and classification of several commonly found defects of the hydrogen-terminated silicon (100)-2 × 1 surface (H–Si(100)-2 × 1) by using six unique imaging modes. The H–Si surface was chosen as it provides a promising

• . With this, we take the first steps toward enabling the creation of superior H–Si surfaces through an improved understanding of surface defects, ultimately leading to more consistent and reliable fabrication of atom scale devices. Keywords: atomic force microscopy; hydrogen-terminated silicon; scanning

• tunnelling hydrogen microscopy; scanning tunnelling microscopy; surface metrology; Introduction Novel approaches to advance integrated circuitry beyond CMOS have focused on atom scale structures and their reliable fabrication [1]. Hydrogen-terminated silicon (H–Si) surfaces are one such versatile platform

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• allyl-containing dopant molecule by a hydrogen-terminated silicon surface (produced using hydrofluoric acid). A capping layer is then applied to the sample followed by thermal treatment to promote diffusion of the dopant atoms into the silicon substrate while also providing enough energy to activate

• surface. Phosphorus diffuses through silicon oxide significantly slower than through silicon [16][17]. Although it has been shown that hydrogen-terminated silicon re-oxidizes relatively slowly when stored at room temperature in air [3], the elevated temperatures required for MLD processing carried out in

• reaction steps were carried out under inert conditions on a Schlenk line apparatus. A solution of ADP in mesitylene (100 µL in 5 mL) was degassed using multiple freeze–pump–thaw cycles followed by transfer to the reaction flask containing the hydrogen-terminated silicon sample. This reaction flask was

Application of visible-light photosensitization to form alkyl-radical-derived thin films on gold

• Rashanique D. Quarels,
• Xianglin Zhai,
• Neepa Kuruppu,
• Jenny K. Hedlund,
• Ashley A. Ellsworth,
• Amy V. Walker,
• Jayne C. Garno and
• Justin R. Ragains

Beilstein J. Nanotechnol. 2017, 8, 1863–1877, doi:10.3762/bjnano.8.187

• ][24][25][26][27][28]. Carbon-centered radicals have proven to be versatile grafting species that can covalently bond to a number of surfaces including precious, coinage and industrial metals [1][2][3][4][5][6], hydrogen-terminated silicon [7][8], and indium tin oxide [9][10]. The resulting aryl- and

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

• Siti Noorhaniah Yusoh and
• Khatijah Aisha Yaacob

Beilstein J. Nanotechnol. 2016, 7, 1461–1470, doi:10.3762/bjnano.7.138

• disruption of the hydrogen bond network (between IPA molecules and hydrogen-terminated silicon surface) by other excess IPA molecules [28]. This approach would eliminate the monolayer and leads to an increase in the etching rate (Figure 11). Additionally, the roughness (Ra) values of silicon nanowires were

Formation of stable Si–O–C submonolayers on hydrogen-terminated silicon(111) under low-temperature conditions

• Yit Lung Khung,
• Siti Hawa Ngalim,
• Andrea Scaccabarozzi and
• Dario Narducci

Beilstein J. Nanotechnol. 2015, 6, 19–26, doi:10.3762/bjnano.6.3

• techniques to graft organics onto silicon surfaces [2][3][4][5][6]. It is the process during which unsaturated carbon reacts with hydrogen-terminated silicon (SiH) to form a stable submonolayer through covalent Si–C linkages at the surface. The reaction can typically be mediated through catalysts or Lewis

• alkyne. Alkynes were deliberately chosen due to their higher reactivity towards hydrogen-terminated silicon compared to alkenes. The main theme of this study is to examine whether hydrogen extraction is a probable mechanism for surface reaction at low temperatures. Two alkynes were selected, namely 4